Search Results for "IPB80N06S207ATMA4"

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Power Field-Effect Transistor, 80A I(D), 55V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Datasheet

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

IPB80N06S207ATMA1

Infineon

Power Field-Effect Transistor

Datasheet

Active

Package/Case: TO-263-3

Continuous Drain Current (ID): 80A

Drain to Source Voltage (Vdss): 55V

Fall Time: 36ns

IPB80N06S207ATMA2

Infineon

Trans MOSFET N-CH 55V 80A

Datasheet

Obsolete

Fall Time: 36ns

Max Operating Temperature: 175°C

Min Operating Temperature: -55°C

Number of Channels: 1

Search Results for "IPB80N06S207ATMA4"

Filters

IPB80N06S207ATMA4

Infineon

Power Field-Effect Transistor, 80A I(D), 55V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Datasheet

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

IPB80N06S207ATMA1

Infineon

Power Field-Effect Transistor

Datasheet

Active