Search Results for &quot; IRF1018ESTRLPBF &quot;

N-Channel MOSFET, 60V, 79A, 8.4mΩ, TO-263

SMALL OUTLINE, R-PSSO-G2

Transferred

Package/Case: TO-263

Continuous Drain Current (ID): 79A

Drain to Source Voltage (Vdss): 60V

Drain-source On Resistance-Max: 8.4MR

N-Ch MOSFET, 60V, 79A, 8.4mΩ, D2PAK-3

LEAD FREE, D2PAK-3

Active

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

LEAD FREE, PLASTIC, D2PAK-3

Transferred

Current Rating: 84A

Drain to Source Voltage (Vdss): 60V

Drain-source On Resistance-Max: 12MR

Lead Free: Lead Free

Search Results for "IRF1018ESTRLPBF"

Filters

N-Channel MOSFET, 60V, 79A, 8.4mΩ, TO-263

SMALL OUTLINE, R-PSSO-G2

Transferred

Package/Case: TO-263

Continuous Drain Current (ID): 79A

Drain to Source Voltage (Vdss): 60V

Drain-source On Resistance-Max: 8.4MR

N-Ch MOSFET, 60V, 79A, 8.4mΩ, D2PAK-3

LEAD FREE, D2PAK-3

Active

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3