Search Results for &quot; IRF7204 &quot;

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 5.3A

Drain to Source Voltage (Vdss): 20V

Fall Time: 68ns

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

P-Channel MOSFET, 20V, 5.3A, 60mR, SOIC

LEAD FREE, SO-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 5.3A

Current Rating: -5.3A

Drain to Source Voltage (Vdss): 20V

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 5.3A

Current Rating: -5.3A

Drain to Source Voltage (Vdss): 20V

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 5.3A

Current Rating: -5.3A

Drain to Source Voltage (Vdss): 20V

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Min Operating Temperature: -55

Terminal Position: DUAL

Search Results for "IRF7204"

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Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 5.3A

Drain to Source Voltage (Vdss): 20V

Fall Time: 68ns

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

P-Channel MOSFET, 20V, 5.3A, 60mR, SOIC

LEAD FREE, SO-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 5.3A

Current Rating: -5.3A

Drain to Source Voltage (Vdss): 20V

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 5.3A

Current Rating: -5.3A

Drain to Source Voltage (Vdss): 20V

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 5.3A

Current Rating: -5.3A

Drain to Source Voltage (Vdss): 20V

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8