Power Field-Effect Transistor, 0.63A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4

Power Field-Effect Transistor, 0.63A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HEXDIP-4
Small Signal Field-Effect Transistor, 0.45A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HEXDIP-4
Small Signal Field-Effect Transistor, 0.49A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4
Small Signal Field-Effect Transistor, 0.56A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SIMILAR TO MO-001AN, 3 PIN