Search Results for &quot; IXBF20N360 &quot;

IGBT 20A 360V N-Channel Power Transistor

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IGBT 20A 360V N-Channel Power Transistor

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Insulated Gate Bipolar Transistor, 27A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, I4PAK-3

PLASTIC, ISOPLUS, I4PAK-3

Transferred

Collector Emitter Breakdown Voltage: 3kV

Collector-emitter Voltage-Max: 3.2V

Input Type: STANDARD

Max Collector Current: 27A

Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor,

Active

Insulated Gate Bipolar Transistor, 27A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, I4PAK-3

PLASTIC, ISOPLUS, I4PAK-3

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Search Results for "IXBF20N360"

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IGBT 20A 360V N-Channel Power Transistor

Transferred

IGBT 20A 360V N-Channel Power Transistor

Active

Insulated Gate Bipolar Transistor, 27A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, I4PAK-3

PLASTIC, ISOPLUS, I4PAK-3

Transferred

Collector Emitter Breakdown Voltage: 3kV

Collector-emitter Voltage-Max: 3.2V

Input Type: STANDARD

Max Collector Current: 27A

Insulated Gate Bipolar Transistor

Transferred

Insulated Gate Bipolar Transistor,

Active

Insulated Gate Bipolar Transistor, 27A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, I4PAK-3