Search Results for &quot; IXFB40N110Q3 &quot;

Power Field-Effect Transistor,

Active

N-Channel MOSFET, 1000V, 44A, 220mR Rds(on), TO-264

PLASTIC, PLUS264, 3 PIN

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 44A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 220mR

Power Field-Effect Transistor, 40A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS264, 3 PIN

PLASTIC, PLUS264, 3 PIN

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 40A

Drain to Source Breakdown Voltage: 1.1kV

Drain to Source Resistance: 260mR

Power Field-Effect Transistor, 40A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS264, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor,

Active

Search Results for "IXFB40N110Q3"

Filters

IXFB40N110Q3

Power Field-Effect Transistor,

Active

N-Channel MOSFET, 1000V, 44A, 220mR Rds(on), TO-264

PLASTIC, PLUS264, 3 PIN

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 44A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 220mR

Power Field-Effect Transistor, 40A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS264, 3 PIN

PLASTIC, PLUS264, 3 PIN

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 40A

Drain to Source Breakdown Voltage: 1.1kV

Drain to Source Resistance: 260mR

Power Field-Effect Transistor, 40A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS264, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor,