Search Results for &quot; IXFK21N100Q &quot;

N-CHANNEL HiPerFET MOSFET 1kV 21A 500mR TO-264-3

PLASTIC PACKAGE-3

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 21A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 500mR

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3

PLASTIC PACKAGE-3

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-264AA

N-Channel MOSFET, 1000V, 24A, 440mR, TO-264

PLASTIC PACKAGE-3

Transferred

Package/Case: TO-264

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 440mR

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

PLASTIC, MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 21A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 500mR

Power Field-Effect Transistor, 18A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 18A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 500mR

Drain to Source Voltage (Vdss): 1kV

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

PLASTIC, PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 21A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 500mR

N-Channel MOSFET, 1000V, 24A, TO-264

Active

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

PLASTIC, PLUS247, 3 PIN

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 18A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

PLASTIC, MINIBLOC-4

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

Search Results for "IXFK21N100Q"

Filters

N-CHANNEL HiPerFET MOSFET 1kV 21A 500mR TO-264-3

PLASTIC PACKAGE-3

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 21A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 500mR

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3

PLASTIC PACKAGE-3

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-264AA

N-Channel MOSFET, 1000V, 24A, 440mR, TO-264

PLASTIC PACKAGE-3

Transferred

Package/Case: TO-264

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 440mR

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

PLASTIC, MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 21A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 500mR

Power Field-Effect Transistor, 18A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 18A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 500mR

Drain to Source Voltage (Vdss): 1kV

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

PLASTIC, PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 21A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 500mR

N-Channel MOSFET, 1000V, 24A, TO-264

Active

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

PLASTIC, PLUS247, 3 PIN

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 18A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4