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RF Power Field-Effect Transistor

,

Obsolete

Current Rating: 1.2A

Frequency: 880MHz

Gain: 20.9dB

Lead Free: Lead Free

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLATPACK, R-CDFP-F2

Obsolete

Drain to Source Breakdown Voltage: 66V

Drain to Source Voltage (Vdss): 66V

Frequency: 880MHz

Gain: 21dB

RF Power Field-Effect Transistor

,

Obsolete

Current Rating: 1.2A

Drain to Source Voltage (Vdss): 28V

Frequency: 880MHz

Gain: 20.9dB

FET RF 68V 880MHZ NI-780S

Obsolete

Current Rating: 1.2A

Drain to Source Voltage (Vdss): 28V

Frequency: 880MHz

Gain: 20.9dB

RF Power Field-Effect Transistor

,

Obsolete

Current Rating: 950mA

Drain to Source Voltage (Vdss): 28V

Frequency: 880MHz

Gain: 19.2dB

Freescale Semiconductor

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN

FLATPACK, R-CDFP-F2

Transferred

Max Operating Temperature: 225

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

Freescale Semiconductor

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN

FLATPACK, R-CDFP-F2

Transferred

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2