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Trans RF MOSFET N-CH 65V 5-Pin Case 465M-01 T/R

Obsolete

Continuous Drain Current (ID): 1uA

Frequency: 2.3GHz

Gain: 16dB

Gate to Source Voltage (Vgs): 1.8V

S BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLANGE MOUNT, R-CDFM-F2

Obsolete

Drain to Source Voltage (Vdss): 65V

Frequency: 2.17GHz

Gain: 17.6dB

Gate to Source Voltage (Vgs): 10V

S BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLATPACK, R-CDFP-F2

Obsolete

Continuous Drain Current (ID): 1uA

Frequency: 2.3GHz

Gain: 16dB

Gate to Source Voltage (Vgs): 1.8V

Trans RF MOSFET N-CH 65V 5-Pin Case 465M-01 T/R

Obsolete

Continuous Drain Current (ID): 1uA

Frequency: 2.3GHz

Gain: 16dB

Gate to Source Voltage (Vgs): 1.8V

S BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLANGE MOUNT, R-CDFM-F2

Obsolete

Continuous Drain Current (ID): 900mA

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 2.69GHz

Freescale Semiconductor

LTE Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 28 W Avg., 28 V

ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN

Transferred

Max Operating Temperature: 225

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

Freescale Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-502A

Obsolete