Search Results for &quot; MRFE6S9200H &quot;

RF Power Field-Effect Transistor

Obsolete

Drain to Source Breakdown Voltage: 66V

Drain to Source Voltage (Vdss): 66V

Frequency: 880MHz

Gain: 21dB

RF Power Field-Effect Transistor

Obsolete

Drain to Source Breakdown Voltage: 66V

Drain to Source Voltage (Vdss): 66V

Frequency: 880MHz

Gain: 21dB

MRFE6S9200HR5

FET RF 66V 880MHZ NI-880

Obsolete

Frequency: 880MHz

Gain: 21dB

Output Power: 58W

Package Quantity: 50

Freescale Semiconductor

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880S, CASE 465C-03, 2 PIN

FLANGE MOUNT, R-XDFM-F2

Transferred

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

MRFE6S9200HSR5

FET RF 66V 880MHZ NI-880S

Obsolete

Frequency: 880MHz

Gain: 21dB

Output Power: 58W

Package Quantity: 50

Search Results for "MRFE6S9200H"

Filters

MRFE6S9200HR3

RF Power Field-Effect Transistor

Obsolete

Drain to Source Breakdown Voltage: 66V

Drain to Source Voltage (Vdss): 66V

Frequency: 880MHz

Gain: 21dB

RF Power Field-Effect Transistor

Obsolete

Drain to Source Breakdown Voltage: 66V

Drain to Source Voltage (Vdss): 66V

Frequency: 880MHz

Gain: 21dB

MRFE6S9200HR5

FET RF 66V 880MHZ NI-880

Obsolete

Frequency: 880MHz

Gain: 21dB

Output Power: 58W

Package Quantity: 50

Freescale Semiconductor

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880S, CASE 465C-03, 2 PIN

FLANGE MOUNT, R-XDFM-F2

Transferred

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

MRFE6S9200HSR5

FET RF 66V 880MHZ NI-880S