MRFE6VP8600HR5 - Electronic Components Search

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLANGE MOUNT, R-CDFM-F4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: DUAL

Number of Elements: 2

N-CHANNEL RF Transistor 130V 125W 470-860MHz

Active

Drain to Source Voltage (Vdss): 140V

Frequency: 860MHz

Gain: 19.3dB

Gate to Source Voltage (Vgs): 10V

N-CHANNEL RF Transistor 140V 860MHz 125W FLATPACK, R-CDFP-F4

FLATPACK, R-CDFP-F4

Active

Drain to Source Breakdown Voltage: 140V

Drain to Source Voltage (Vdss): 140V

Frequency: 860MHz

Gain: 19.3dB

RF POWER, FET

,

Active

VHV6 600W 50V NI1230H

Unknown

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