Search Results for &quot; MRFG35010AR1 &quot;

S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN

FLANGE MOUNT, R-PDFM-F2

Transferred

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

RF Power Field-Effect Transistor

Obsolete

RF JFET Transistors 3.5GHZ 10W GAAS NI360HF

Obsolete

Continuous Drain Current (ID): 2.9A

Drain to Source Voltage (Vdss): 15V

Frequency: 3.55GHz

Gain: 10dB

MRFG35020AR1

RF Power Field-Effect Transistor

Obsolete

Drain to Source Breakdown Voltage: 15V

Drain to Source Voltage (Vdss): 15V

Frequency: 3.5GHz

Gain: 11.5dB

MRFG35010R1

RF Power Field-Effect Transistor

Obsolete

Frequency: 3.55GHz

Gain: 10dB

Lead Free: Lead Free

Output Power: 10W

C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN

ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN

Obsolete

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

Search Results for "MRFG35010AR1"

Filters

S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN

FLANGE MOUNT, R-PDFM-F2

Transferred

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

RF Power Field-Effect Transistor

Obsolete

RF JFET Transistors 3.5GHZ 10W GAAS NI360HF

Obsolete

Continuous Drain Current (ID): 2.9A

Drain to Source Voltage (Vdss): 15V

Frequency: 3.55GHz

Gain: 10dB

MRFG35020AR1

RF Power Field-Effect Transistor

Obsolete

Drain to Source Breakdown Voltage: 15V

Drain to Source Voltage (Vdss): 15V

Frequency: 3.5GHz

Gain: 11.5dB

MRFG35010R1

RF Power Field-Effect Transistor

Obsolete

Frequency: 3.55GHz

Gain: 10dB

Lead Free: Lead Free

Output Power: 10W

C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN