Search Results for &quot; MRFG35010NT1 &quot;

12V 3.55GHz RF Transistor

Obsolete

Drain to Source Voltage (Vdss): 12V

Frequency: 3.55GHz

Gain: 10dB

Lead Free: Contains Lead

MRFG35010MT1

12V 9W RF Transistor, 3.55GHz, 10dB Gain, 15V Voltage Rating

Obsolete

Drain to Source Voltage (Vdss): 12V

Frequency: 3.55GHz

Gain: 10dB

Lead Free: Contains Lead

Freescale Semiconductor

C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN

ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN

Transferred

Max Operating Temperature: 175

Number of Terminals: 4

Terminal Position: QUAD

Pin Count: 4

C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET

ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN

Obsolete

Max Operating Temperature: 175

Number of Terminals: 4

Terminal Position: QUAD

Number of Elements: 1

Search Results for "MRFG35010NT1"

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MRFG35010NT1

12V 3.55GHz RF Transistor

Obsolete

Drain to Source Voltage (Vdss): 12V

Frequency: 3.55GHz

Gain: 10dB

Lead Free: Contains Lead

MRFG35010MT1

12V 9W RF Transistor, 3.55GHz, 10dB Gain, 15V Voltage Rating

Obsolete

Drain to Source Voltage (Vdss): 12V

Frequency: 3.55GHz

Gain: 10dB

Lead Free: Contains Lead

Freescale Semiconductor

C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN

ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN

Transferred

Max Operating Temperature: 175

Number of Terminals: 4

Terminal Position: QUAD

Pin Count: 4

C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET