Search Results for &quot; NE3508M04-T2-A &quot;

MOSFET N-Channel 2V 2GHz 14dB 125mW Lead Free Tape and Reel

End of Life

Drain to Source Breakdown Voltage: 2V

Frequency: 2GHz

Gain: 14dB

Lead Free: Lead Free

NE3508M04-T2-A

SMALL OUTLINE, R-PDSO-F4

Obsolete

Additional Feature: LOW NOISE

Case Connection: DRAIN

Drain Current-Max (ID): 30mA

DS Breakdown Voltage-Min: 3V

120mA SOT-23 N-Channel MOSFET, 2V Drain to Source Breakdown Voltage

Not Recommended for New Design

Package/Case: SOT-23

Continuous Drain Current (ID): 120mA

Drain to Source Breakdown Voltage: 2V

Gain: 14dB

NE3509 Series 4 V 2 GHz N-Channel HJ-FET Low Noise Amplifier - ThinMiniMold-4

Volume Production

Package/Case: SOT-23

Continuous Drain Current (ID): 60mA

Drain to Source Breakdown Voltage: 2V

DS Breakdown Voltage-Min: 4V

FET RF 4V 12GHZ M04

End of Life

Continuous Drain Current (ID): 70mA

Drain to Source Voltage (Vdss): 4V

Frequency: 12GHz

Gain: 12dB

JFET N-Channel 2V 4V 125mW Cut Tape

Obsolete

Drain to Source Breakdown Voltage: 2V

Frequency: 2GHz

Gain: 17.5dB

Lead Free: Lead Free

Trans JFET N-CH 4V 70mA HJFET 4-Pin Thin-Type Super Mini-Mold T/R

Volume Production

Continuous Drain Current (ID): 70mA

Gate to Source Voltage (Vgs): -3V

Max Operating Temperature: 125°C

Min Operating Temperature: -65°C

NE3503M04-T2-A

SMALL OUTLINE, R-PDSO-F4

Obsolete

Drain Current-Max (Abs) (ID): 70mA

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

FET Technology: HETERO-JUNCTION

N-Channel HETERO-JUNCTION FET 20mA 3V 150°C 150mW SMALL OUTLINE

SMALL OUTLINE, R-PDSO-F4

Obsolete

Drain Current-Max (ID): 20mA

DS Breakdown Voltage-Min: 3V

FET Technology: HETERO-JUNCTION

Highest Frequency Band: S BAND

Broadcom

Trans JFET N-CH 4V 60mA 4-Pin Thin-Type Super Mini-Mold T/R

Unknown

Package/Case: SOT-343

Current Rating: 100mA

Frequency: 2GHz

Gain: 16.5dB

NE3505M04-T2-A

SUPER LOW NOISE PSEUDOMORPHIC

Obsolete

Search Results for "NE3508M04-T2-A"

Filters

MOSFET N-Channel 2V 2GHz 14dB 125mW Lead Free Tape and Reel

End of Life

Drain to Source Breakdown Voltage: 2V

Frequency: 2GHz

Gain: 14dB

Lead Free: Lead Free

NE3508M04-T2-A

SMALL OUTLINE, R-PDSO-F4

Obsolete

Additional Feature: LOW NOISE

Case Connection: DRAIN

Drain Current-Max (ID): 30mA

DS Breakdown Voltage-Min: 3V

120mA SOT-23 N-Channel MOSFET, 2V Drain to Source Breakdown Voltage

Not Recommended for New Design

Package/Case: SOT-23

Continuous Drain Current (ID): 120mA

Drain to Source Breakdown Voltage: 2V

Gain: 14dB

NE3509 Series 4 V 2 GHz N-Channel HJ-FET Low Noise Amplifier - ThinMiniMold-4

Volume Production

Package/Case: SOT-23

Continuous Drain Current (ID): 60mA

Drain to Source Breakdown Voltage: 2V

DS Breakdown Voltage-Min: 4V

FET RF 4V 12GHZ M04

End of Life

Continuous Drain Current (ID): 70mA

Drain to Source Voltage (Vdss): 4V

Frequency: 12GHz

Gain: 12dB

JFET N-Channel 2V 4V 125mW Cut Tape

Obsolete

Drain to Source Breakdown Voltage: 2V

Frequency: 2GHz

Gain: 17.5dB

Lead Free: Lead Free

Trans JFET N-CH 4V 70mA HJFET 4-Pin Thin-Type Super Mini-Mold T/R

Volume Production

Continuous Drain Current (ID): 70mA

Gate to Source Voltage (Vgs): -3V

Max Operating Temperature: 125°C

Min Operating Temperature: -65°C

NE3503M04-T2-A

SMALL OUTLINE, R-PDSO-F4

Obsolete

Drain Current-Max (Abs) (ID): 70mA

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

FET Technology: HETERO-JUNCTION

N-Channel HETERO-JUNCTION FET 20mA 3V 150°C 150mW SMALL OUTLINE

SMALL OUTLINE, R-PDSO-F4

Obsolete

Drain Current-Max (ID): 20mA

DS Breakdown Voltage-Min: 3V

FET Technology: HETERO-JUNCTION

Highest Frequency Band: S BAND

Broadcom

Trans JFET N-CH 4V 60mA 4-Pin Thin-Type Super Mini-Mold T/R

Unknown

Package/Case: SOT-343

Current Rating: 100mA

Frequency: 2GHz

Gain: 16.5dB

NE3505M04-T2-A

SUPER LOW NOISE PSEUDOMORPHIC