Search Results for &quot; NEC258 &quot;

CEL

CEL NE32584C-S Ceramic FET, 90mA ID, 4V Vdss, 12.5dB Gain, 150°C

Obsolete

Package/Case: Ceramic

Continuous Drain Current (ID): 90mA

Drain to Source Voltage (Vdss): 4V

Gain: 12.5dB

NE32584C-T1

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET

DISK BUTTON, O-CRDB-F4

Obsolete

Continuous Drain Current (ID): 90mA

Gate to Source Voltage (Vgs): 3V

Max Operating Temperature: 150°C

Min Operating Temperature: -65°C

Trans JFET N-CH 4V 90mA AlGaAs HJFET 4-Pin Case 84C T/R

Obsolete

Continuous Drain Current (ID): 90mA

Gate to Source Voltage (Vgs): 3V

Max Operating Temperature: 150°C

Min Operating Temperature: -65°C

NE32584C-T1/T1A

Volume Production

NE32584C-T1

Obsolete

Drain Current-Max (Abs) (ID): 90mA

Drain Current-Max (ID): 90mA

FET Technology: METAL SEMICONDUCTOR

Max Operating Temperature: 150°C

NE32584C-SL

X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET, METAL CERAMIC, 84C, 4 PIN

Obsolete

Number of Terminals: 4

Terminal Position: UNSPECIFIED

Number of Elements: 1

NE32584C-T1A

Obsolete

Number of Terminals: 4

Terminal Position: UNSPECIFIED

Number of Elements: 1

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET

DISK BUTTON, O-CRDB-F4

Obsolete

RoHS Compliant: No

NE32584C

Trans JFET 4V 90mA

Unknown

Description: Trans JFET 4V 90mA

Search Results for "NEC258"

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CEL

CEL NE32584C-S Ceramic FET, 90mA ID, 4V Vdss, 12.5dB Gain, 150°C

Obsolete

Package/Case: Ceramic

Continuous Drain Current (ID): 90mA

Drain to Source Voltage (Vdss): 4V

Gain: 12.5dB

NE32584C-T1

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET

DISK BUTTON, O-CRDB-F4

Obsolete

Continuous Drain Current (ID): 90mA

Gate to Source Voltage (Vgs): 3V

Max Operating Temperature: 150°C

Min Operating Temperature: -65°C

Trans JFET N-CH 4V 90mA AlGaAs HJFET 4-Pin Case 84C T/R

Obsolete

Continuous Drain Current (ID): 90mA

Gate to Source Voltage (Vgs): 3V

Max Operating Temperature: 150°C

Min Operating Temperature: -65°C

NE32584C-T1/T1A

Volume Production

NE32584C-T1

Obsolete

Drain Current-Max (Abs) (ID): 90mA

Drain Current-Max (ID): 90mA

FET Technology: METAL SEMICONDUCTOR

Max Operating Temperature: 150°C

NE32584C-SL

X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET, METAL CERAMIC, 84C, 4 PIN

Obsolete

Number of Terminals: 4

Terminal Position: UNSPECIFIED

Number of Elements: 1

NE32584C-T1A

Obsolete

Number of Terminals: 4

Terminal Position: UNSPECIFIED

Number of Elements: 1

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET

DISK BUTTON, O-CRDB-F4

Obsolete

RoHS Compliant: No

NE32584C

Trans JFET 4V 90mA