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N-CHANNEL TrenchMOS MOSFET 30V 67A SOT-669 Surface Mount

Volume Production

Package/Case: SOT-669

Continuous Drain Current (ID): 67A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 8.2mR

N-Channel MOSFET, 30V, 80A, 5.7mR, SOT-669, Surface Mount

Obsolete

Package/Case: SOT-669

Continuous Drain Current (ID): 80A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 5.7mR

30V 76.7A N-CH MOSFET, 5.9mR Rds On, SOT-669

Obsolete

Package/Case: SOT-669

Continuous Drain Current (ID): 76.7A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 5.9mR

PH3230S - N-channel TrenchMOS intermediate level FET SOIC 4-Pin

PLASTIC, LFPAK-4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: SINGLE

JEDEC Package Code: MO-235AA