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NPN Phototransistor, 940nm, 30V, 700mA, Axial

T-3/4

Active

Package/Case: Axial

Collector Emitter Breakdown Voltage: 30V

Collector Emitter Saturation Voltage: 400mV

Collector Emitter Voltage (VCEO): 30V

Infrared Phototransistor, 940nm, 30V, 2mA, SMD, NPN

PLASTIC PACKAGE-2

Active

Package/Case: SMD/SMT

Collector Emitter Breakdown Voltage: 30V

Collector Emitter Voltage (VCEO): 30V

Collector-emitter Voltage-Max: 30V

NPN Transistor 30V 75mW SMD/SMT Top View

Obsolete

Package/Case: SMD/SMT

Collector Emitter Breakdown Voltage: 30V

Collector Emitter Voltage (VCEO): 30V

Collector-emitter Voltage-Max: 30V

PHOTOTRANSISTOR,NPN,940nM PEAK WAVELENGTH,LED-8c

Volume Production

Fall Time: 15us

Height: 3mm

Length: 2.7mm

Mount: Surface Mount

Phototransistors T-3/4 PHOTO SENSOR

Obsolete

Collector-emitter Voltage-Max: 30V

Fall Time: 15us

Max Operating Temperature: 85°C

Min Operating Temperature: -25°C

Phototransistor IR Chip Silicon 940nm 2-Pin T-3/4 T/R

T-3/4

Active

Max Operating Temperature: 85

Min Operating Temperature: -25

Number of Functions: 1

Power Dissipation-Max: 0.075

Photo Transistor, 940nm, PLASTIC PACKAGE-2

PLASTIC PACKAGE-2

Transferred

Max Operating Temperature: 85

Min Operating Temperature: -25

Pin Count: 2

Number of Functions: 1

Rochester Electronics

QSB363CZR

Unknown