IGBT MODULE, 1.2KV, 240A, SKIM 4; Transistor Polarity:-; DC Collector Current:240A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:37; Packaging:Each ;RoHS Compliant: Yes
Trans IGBT Module 600V
Insulated Gate Bipolar Transistor, 220A I(C), 1700V V(BR)CES, N-Channel, CASE D, SKIM 4, 37 PIN
Insulated Gate Bipolar Transistor, 748A I(C), 1200V V(BR)CES, N-Channel, SKIM 93, 33 PIN
Insulated Gate Bipolar Transistor, 554A I(C), 1200V V(BR)CES, N-Channel, SKIM 93, 33 PIN
Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, CASE D, SKIM 4, 37 PIN
MODEL # SKiM 120 GD 176 D NC/NR
SKIM; Ultrafast NPT IGBT Module; 200V; 300A