Insulated Gate Bipolar Transistor, 260A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7
Insulated Gate Bipolar Transistor, 660A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
IGBT 1.2kV 470A 150°C FLANGE MOUNT
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
Module 1.2kV 200A 30.5mm x 61.4mm Panel Mount
Transistor, Igbt; D-56; Igbt; 1200 V; 310 A; 1200 V; 20 V; 5.5 V (typ.)
Trans IGBT Module N-CH 1.2KV 660A 7-Pin Case D-56
