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Stmicroelectronics

Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

Active

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Saturation Voltage: 1.85V

Collector Emitter Voltage (VCEO): 600V

Stmicroelectronics

600V 60A Trench Gate Field-Stop IGBT, TO-247, High Speed

,

Active

Package/Case: TO-247

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Saturation Voltage: 2.35V

Collector Emitter Voltage (VCEO): 600V

Stmicroelectronics

600V 80A TO-247 Insulated Gate Bipolar Transistor

TO-247

Active

Package/Case: TO-247

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Saturation Voltage: 2.35V

Collector Emitter Voltage (VCEO): 600V

Stmicroelectronics

Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

Active

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Saturation Voltage: 1.85V

Collector Emitter Voltage (VCEO): 600V

Collector-emitter Voltage-Max: 2.3V

Stmicroelectronics

Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

Active