Search Results for "TK4A60DA"

Filters

TRANSISTOR 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power

Datasheet

FLANGE MOUNT, R-PSFM-T3

Active

Package/Case: TO-220

Continuous Drain Current (ID): 3.5A

Drain to Source Voltage (Vdss): 600V

Max Operating Temperature: 150°C

TK4A60DA(STA4,Q,M)

Toshiba

MOSFET N-CH 600V 3.5A TO220SIS

Datasheet

Volume Production

Package/Case: TO-220-3

Continuous Drain Current (ID): 3.5A

Drain to Source Voltage (Vdss): 600V

Fall Time: 8ns

TK4A60DA(Q,M)

Toshiba

600V 3.5A Through Hole MOSFET

Datasheet

End of Life

Package/Case: SC

Continuous Drain Current (ID): 3.5A

Drain to Source Voltage (Vdss): 600V

Fall Time: 8ns

TK4A60DA5(Q)

Toshiba

Silicon N Channel Mos Type (pai-mos)

Volume Production

TK4A60DA(STA4QM

Not Recommended for New Design

Continuous Drain Current (ID): 3.5A

Fall Time: 8ns

Gate to Source Voltage (Vgs): 30V

Max Operating Temperature: 150°C

Search Results for "TK4A60DA"

Filters

TK4A60DA

Toshiba

TRANSISTOR 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power

Datasheet

FLANGE MOUNT, R-PSFM-T3

Active

Package/Case: TO-220

Continuous Drain Current (ID): 3.5A

Drain to Source Voltage (Vdss): 600V

Max Operating Temperature: 150°C

TK4A60DA(STA4,Q,M)

Toshiba

MOSFET N-CH 600V 3.5A TO220SIS

Datasheet

Volume Production

Package/Case: TO-220-3

Continuous Drain Current (ID): 3.5A

Drain to Source Voltage (Vdss): 600V

Fall Time: 8ns

TK4A60DA(Q,M)

Toshiba

600V 3.5A Through Hole MOSFET

Datasheet

End of Life

Package/Case: SC

Continuous Drain Current (ID): 3.5A

Drain to Source Voltage (Vdss): 600V

Fall Time: 8ns

TK4A60DA5(Q)

Toshiba

Silicon N Channel Mos Type (pai-mos)

Volume Production

TK4A60DA(STA4QM

Not Recommended for New Design

Continuous Drain Current (ID): 3.5A

Fall Time: 8ns

Gate to Source Voltage (Vgs): 30V

Max Operating Temperature: 150°C