IGBT MODULE, 1.2KV, 220A, SEMITRANS 2N; Transistor Polarity:N Channel; DC Collector Current:220A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, CASE D 93, SEMITRANS 2N, 7 PIN
Insulated Gate Bipolar Transistor, 190A I(C), 1200V V(BR)CES, N-Channel, CASE D 93, SEMITRANS 2N, 7 PIN
Insulated Gate Bipolar Transistor, 250A I(C), 600V V(BR)CES, N-Channel, CASE D 93, SEMITRANS 2N, 7 PIN
Insulated Gate Bipolar Transistor, 250A I(C), 600V V(BR)CES, N-Channel, CASE D 95, SEMITRANS 2N, 5 PIN
Insulated Gate Bipolar Transistor, 80A I(C), 1700V V(BR)CES, N-Channel, CASE D 93, SEMITRANS 2N, 7 PIN
Insulated Gate Bipolar Transistor, 250A I(C), 600V V(BR)CES, N-Channel, CASE D 94, SEMITRANS 2N, 5 PIN
Insulated Gate Bipolar Transistor, 125A I(C), 1700V V(BR)CES, N-Channel, CASE D 93, SEMITRANS 2N, 7 PIN
JFET 2N-CH 50V 0.2A EMT6
