This device is a full-bridge transformer driver IC designed to generate an asymmetric isolated gate-driver supply for IGBT, GaN, and SiC applications. It supports up to 20 V input supply and up to 5 W output power, with selectable 33% or 50% duty cycle operation and 65 kHz or 103 kHz internal oscillator frequency options. The device integrates short-circuit protection, over-temperature protection, and undervoltage lockout to protect the supply stage from fault conditions. It is offered in the PG-TSSOP-8-2 package and is qualified for industrial use.
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| Channels | 2 |
| Configuration | Full Bridge |
| Voltage class | 20V |
| Output power | 5W |
| Internal oscillator frequency | 65, 103kHz |
| Duty cycle | 33, 50% |
| Synchronization propagation delay | 280ns |
| Qualification | Industrial |
| Lead pitch | 0.65mm |
| Body size | 3.0 x 3.0mm |
| Body thickness | 0.86mm |
| Moisture sensitivity level | 1 |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
These are design resources that include the Infineon 2EP100R
User guide for the EVAL-2EP130R-VD board, evaluating the 2EP1xxR family of full-bridge transformer drivers for isolated IGBT and SiC MOSFET gate driver power supplies.
User guide for the EVAL-2EP130R-PR board, evaluating Infineon's 2EP1xxR full-bridge transformer drivers for isolated IGBT and SiC MOSFET gate driver power supplies.
