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Design DocumentInfineon

Infineon EVAL-2EP130R-PR EiceDRIVER Evaluation Board User Guide

User guide for the EVAL-2EP130R-PR board, evaluating Infineon's 2EP1xxR full-bridge transformer drivers for isolated IGBT and SiC MOSFET gate driver power supplies.

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Overview

The EVAL-2EP130R-PR evaluation board is designed to validate the Infineon 2EP1xxR series of full-bridge transformer driver ICs, including the 2EP100R, 2EP101R, 2EP110R, and 2EP130R. These drivers are utilized to create isolated gate driver power supplies using a peak rectification topology for IGBT and SiC MOSFET applications. The guide details board setup, parameter adjustment for duty cycle and frequency via external resistors, and bypass mode operation. The board supports isolated supply voltages for dual gate driver configurations (high-side and low-side) and includes three Wurth Elektronik transformers (750319375, 750319376, 750319377) to achieve various output configurations such as +15/-7.5 V, +15/-4 V, and +18/-2.5 V. The document provides comprehensive technical data including schematics, PCB layout, and a Bill of Materials.

Use Cases

  • Isolated power supply for SiC MOSFET gate drivers
  • Isolated power supply for IGBT gate drivers
  • High-side and low-side gate driver supply in power converters
  • Evaluating peak rectification topology for isolated DC-DC supplies
  • Designing adjustable isolated power rails for industrial drives

Topics

Infineon
EiceDRIVER
EVAL-2EP130R-PR
2EP130R
2EP100R
2EP101R
2EP110R
full-bridge transformer driver
isolated gate driver supply
SiC MOSFET
IGBT
peak rectification

Referenced Parts

2EP100R

Infineon

2EP1xxR (2EP100R, 2EP101R, 2EP110R, and 2EP130R) product family.

2EP101R

Infineon

2EP1xxR (2EP100R, 2EP101R, 2EP110R, and 2EP130R) product family.

2EP110R

Infineon

2EP1xxR (2EP100R, 2EP101R, 2EP110R, and 2EP130R) product family.

2EP130R

Infineon

2EP130R is pre-assembled on EVAL-2EP130R-PR for complete feature evaluation.

2EP130R

Infineon

Infineon 2EP130R Yes

750319375

Wurth Elektronik

WE 750319375: TTR=1.25:1, with VDD=15 V, DC=33% provides +15/-7.5 V for IGBTs

750319376

Wurth Elektronik

WE 750319376: TTR=1.5:1, with VDD=15 V, DC=22% provides +15/-4 V for SiC MOSFETs

750319377

Wurth Elektronik

WE 750319377: TTR=1.4:1, with VDD=15 V, DC=14% provides +18/-2.5 V for SiC MOSFETs

CRCW080547K5FK

Vishay

Vishay CRCW080547K5FK Yes

CRCW0805698RFK

Vishay

Vishay CRCW0805698RFK Yes

CRCW0805698RFK

Vishay

Vishay CRCW0805698RFK No