This device is an N-channel power MOSFET rated for 150 V drain-source voltage and up to 87 A drain current. It is specified with a maximum on-resistance of 9.3 mΩ and is housed in a SuperSO8 5x6 package identified by Infineon as PG-TDSON-8-7. The part belongs to the OptiMOS™ 5 150 V family and is intended for low-voltage drives, telecom equipment, and solar applications. Infineon highlights lower output charge, ultra-low reverse recovery charge, and increased commutation ruggedness for higher switching-frequency operation.
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| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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