The Infineon SPI11N65C3XKSA1 is a N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 11A and a drain to source resistance of 380mR. The device is packaged in a TO-262-3 package and is mounted through a hole. The MOSFET has a maximum power dissipation of 125W and a gate to source voltage of 20V.
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Infineon SPI11N65C3XKSA1 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.45mm |
| Input Capacitance | 1.2nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 380mR |
| RoHS Compliant | No |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 10ns |
| Width | 4.52mm |
| RoHS | Not Compliant |
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