N-channel Junction Field-Effect Transistor (JFET) in a SOT-23 surface mount package. Features a continuous drain current of 5mA, drain-to-source voltage (Vdss) up to 35V, and gate-to-source voltage (Vgs) of -35V. Offers a drain-to-source resistance of 50 Ohms and a maximum power dissipation of 350mW. Operates across a temperature range of -55°C to 150°C and is RoHS compliant. Supplied in tape and reel packaging with 3000 units per reel.
PackageSOT-23
Current Rating5mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi MMBFJ112 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 5mA |
| Current Rating | 5mA |
| Drain to Source Resistance | 50R |
| Drain to Source Voltage (Vdss) | 35V |
| Gate to Source Voltage (Vgs) | -35V |
| Height | 0.93mm |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 35V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBFJ112 Datasheet
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