The NDD60N360U1T4G is a single N-CHANNEL MOSFET with a maximum drain to source voltage of 600V and a continuous drain current of 11A. It features a drain to source resistance of 360mR and a maximum power dissipation of 114W. The device is packaged in a halogen free and RoHS compliant DPAK package and is rated for operation between -55°C and 150°C. It is available in quantities of 2500 per reel.
PackageDPAK
PolarityN-CHANNEL
Power114W
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Technical Specifications
Onsemi NDD60N360U1T4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 25V |
| Halogen Free | Halogen Free |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 114W |
| Radiation Hardening | No |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDD60N360U1T4G Datasheet
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