Insulated Gate Bipolar Transistor, 5.5A I(C), 1200V V(BR)CES, N-Channel, TO-3PL, 3 PIN
FUJI ELECTRIC 1MBI3600U4D-170 IGBT Array & Module Transistor, N Channel, 4.8 kA, 2.57 V, 18.65 kW, 1.7 kV, Module
Rectifier Diode, Schottky, 1 Phase, 1 Element, 120A, 100V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN
Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
Insulated Gate Bipolar Transistor, 12A I(C), 1400V V(BR)CES, N-Channel, TO-3PF, 3 PIN
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, PLASTIC PACKAGE-3