FUJI ELECTRIC 2MBI100U4A-120-50 IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module
Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
FUJI ELECTRIC 2MBI150U2A-060-50 IGBT Array & Module Transistor, N Channel, 150 A, 2.35 V, 500 W, 600 V, Module
Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, MODULE-11
Insulated Gate Bipolar Transistor, 1800A I(C), 1200V V(BR)CES, N-Channel, MODULE-12
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M218, 7 PIN
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN
Insulated Gate Bipolar Transistor, 100A I(C), 1400V V(BR)CES, N-Channel, M232, 7 PIN
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M232, 7 PIN
Insulated Gate Bipolar Transistor, 75A I(C), 1400V V(BR)CES, N-Channel, M232, 7 PIN
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M218, 7 PIN
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M218, MODULE-7
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7
