Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, MODULE-11
Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, MODULE-4
Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
FUJI ELECTRIC 2MBI100S-120-50 IGBT Array & Module Transistor, Dual Pack, N Channel, 150 A, 2.6 V, 780 W, 1.2 kV, Module
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M218, 7 PIN
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M232, 7 PIN
Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel,

FUJI ELECTRIC 2MBI150U4A-120-50 IGBT Array & Module Transistor, N Channel, 200 A, 2.3 V, 735 W, 1.2 kV, Module
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN