TRANSISTOR,PNPPNP,60V,0.05A,TO78; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:600mW; DC Collector Current:-50mA; DC Current Gain hFE:300; Transistor Case Style:TO-78; No. of Pins:7; Operating Temperature Max:200°C; MSL:-; SVHC:No SVHC (15-Jun-2015); DC Current Gain Max (hfe):300; Gain Bandwidth ft Typ:500MHz; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +200°C; Transition Frequency ft:100Hz
SOLID STATE 2N3810 Bipolar Transistor Array, PNP, -60 V, 600 mW, -50 mA, 150 hFE, TO-78
Silicon Controlled Rectifier, 16A I(T)RMS, 8000mA I(T), 600V V(DRM), 400V V(RRM), 1 Element, TO-3, TO-3, 2 PIN
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Power Bipolar Transistor, 2A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
Small Signal Bipolar Transistor, 0.025A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
