Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
MOSFET N-CH 30V 80A I2PAK
Inductor Power Shielded Wirewound 4.7uH 20% 100KHz 4.2A 0.021Ohm DCR T/R
Inductor Power Shielded Wirewound 1.4uH 30% 100KHz 7A 0.009Ohm DCR T/R
Inductor Power Shielded Wirewound 0.9uH 30% 100KHz 7.8A 0.007Ohm DCR T/R
Inductor Power Shielded Wirewound 15uH 20% 100KHz 2.4A 0.06Ohm DCR T/R
Inductor Power Shielded Wirewound 68uH 20% 100KHz 1.1A 0.247Ohm DCR T/R
Inductor Power Shielded Wirewound 6.8uH 20% 100KHz 3.7A 0.03Ohm DCR T/R
Inductor Power Shielded Wirewound 33uH 20% 100KHz 1.8A 0.105Ohm DCR T/R
100uH Shielded Wirewound Inductor, 20% Tolerance, 1A Current, 0.364 Ohm Resistance
Inductor Power Shielded Wirewound 3.9uH 20% 100KHz 4.9A 0.02Ohm DCR T/R
Inductor Power Shielded Wirewound 47uH 20% 100KHz 1.4A 0.183Ohm DCR T/R
Inductor Power Shielded Wirewound 2.2uH 20% 100KHz 6.3A 0.013Ohm DCR T/R
22uH Shielded Wirewound Inductor 20% 2.2A 0.076R Surface Mount
10uH Shielded Wirewound Inductor 20% 2.95A 0.047R 8x4x8.2mm
Power Field-Effect Transistor, 80A I(D), 75V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
75V 80A TO-262-3 Through Hole Power MOSFET
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
