Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-21
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

FUJI ELECTRIC 7MBR30SA-060-50 IGBT Array & Module Transistor, 7 Pack, N Channel, 30 A, 1.8 V, 120 W, 600 V, Module
Silicon Controlled Rectifier, 78.5A I(T)RMS, 800V V(DRM), 600V V(RRM), 1 Element, MODULE-26
Silicon Controlled Rectifier, 117.75A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, MODULE-38
Insulated Gate Bipolar Transistor, 25A I(C), 1400V V(BR)CES, N-Channel, MODULE-24
Silicon Controlled Rectifier, 47.1A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, MODULE-26
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-35