Transistor
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN
MOSFET N-CH 650V 11A TO220
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET