Search Results for "APT1608QWF/D"

DIODE ARRAY GP 600V 14A TO247

Rectifier Diode, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 3 PIN

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

Rectifier Diode, 1 Phase, 2 Element, 15A, 1000V V(RRM), Silicon, TO-247AD, TO-247, 3 PIN

Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

1000V 4A N-CH Power MOSFET, D3PAK, TO-268

MOSFET N-CH 1200V 22A TO-264

Rectifier Diode, 1 Phase, 2 Element, 15A, 1000V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN

Rectifier Diode, 1 Phase, 2 Element, 15A, 1200V V(RRM), Silicon, TO-247AD, TO-247, 3 PIN

Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

Rectifier Diode, Schottky, 1 Phase, 2 Element, 120A, 200V V(RRM), Silicon, TO-264AA, TO-264, 3 PIN

IGBT 1200V 25A 156W TO220

Insulated Gate Bipolar Transistor, 123A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN

DIODE ARRAY GP 1200V 15A TO247

Rectifier Diode, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN

Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4