Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Insulated Gate Bipolar Transistor, 43A I(C), 900V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
Power Field-Effect Transistor, 34A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Power Field-Effect Transistor, 22A I(D), 1000V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Rectifier Diode, 1 Phase, 2 Element, 15A, 1000V V(RRM), Silicon, TO-247AD, TO-247, 3 PIN
Rectifier Diode, 1 Phase, 2 Element, 15A, 1000V V(RRM), Silicon, TO-247AD, TO-247, 3 PIN
Rectifier Diode, 1 Phase, 1 Element, 15A, 1200V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT, TO-247, 2 PIN