Power Field-Effect Transistor, 185A I(D), 200V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3