Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247
Insulated Gate Bipolar Transistor, 134A I(C), 1200V V(BR)CES, N-Channel, T-MAX, 3 PIN