Power Field-Effect Transistor, 35A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Power Field-Effect Transistor, 17A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Rectifier Diode, 1 Phase, 1 Element, 60A, 200V V(RRM), Silicon, TO-247, TO-247, 2 PIN