Trans IGBT Chip N-CH 600V 130A 4-Pin SOT-227
Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN
Power Field-Effect Transistor, 73A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN
DIODE ARRAY GP 1000V 60A TO264
Trans IGBT Chip N-CH 600V 112A 4-Pin SOT-227
Diode Schottky 200V 75A 3-Pin(3+Tab) T-MAX
DIODE ARRAY GP 1200V 60A TO264
Trans MOSFET N-CH 600V 65A 3-Pin(3+Tab) TO-264 MAX
IGBT 600V 121A 520W TO-247
Insulated Gate Bipolar Transistor, 198A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264MAX, 3 PIN
Telecom Transformer 1CT:1CT/0.7:0.5 32 Terminal Gull Wing SMD
Telecom Transformer 1.37CT:1/0.7:0.5 32 Terminal Gull Wing SMD
Telecom Transformer 1:2:4/1:1 32 Terminal Gull Wing SMD
Telecom Transformer 1CT:1CT 1.5Ohm Prim. DCR 1.5Ohm Sec. DCR 16 Terminal Gull Wing SMD
Telecom Transformer 1CT:1CT 16 Terminal Gull Wing SMD
Telecom Transformer 2(1:2.42) 32 Terminal Gull Wing SMD
Telecom Transformer 2(1CT:1.15CT) 32 Terminal Gull Wing SMD
