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CGHV35400FGaN on SiC

GaN on SiC High Electron Mobility Transistor (HEMT), 455W, 2.9-3.5 GHz

440210

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Operating Frequency: 2.9 - 3.5GHz

Output Power (Pout): 455W

Power Gain: 11dB

Drain Source Voltage (Vds): 125V

RF GaN FET, 500W, 3.1-3.5GHz

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