-20V, P ch NexFET MOSFET™, single LGA 0.8x1.5, 42mOhm 3-PICOSTAR -55 to 150
-20-V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 26 mOhm, gate ESD protection 9-DSBGA -55 to 150
-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection 4-DSBGA -55 to 150
-20V, P ch NexFET MOSFET™, single WLP 1.0x1.5, 32.5mOhm 6-DSBGA -55 to 150
Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, D2PAK-3
Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, D2PAK-3
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Silicon Controlled Rectifier, 12A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, D2PAK-3
Silicon Controlled Rectifier, 25A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, D2PAK-3
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN