EQUG32E3H1H38-DOT-800M - Electronic Components Search

N-Channel MOSFET, 20V, 650mA, 350mW, SOT-363, Surface Mount

Volume Production

Package/Case: SOT-363

Continuous Drain Current (ID): 650mA

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 800mR

MOSFET P-CH 60V 1.17A SOT-223

Obsolete

Package/Case: TO-261-4

Continuous Drain Current (ID): 1.17A

Drain to Source Voltage (Vdss): 60V

Input Capacitance: 160pF

MOSFET N-Channel 650mA 20V 800mR SOT-563

Volume Production

Package/Case: SOT-563

Continuous Drain Current (ID): 650mA

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 800mR

Power Field-Effect Transistor, 15A I(D), 1200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

ISOTOP-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 15A

Current Rating: 15A

Drain to Source Voltage (Vdss): 1.2kV

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