Power Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Power Field-Effect Transistor, 35A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
600V 53A N-Ch MOSFET, 70mR Rds On, TO-247
Power Field-Effect Transistor, 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Power Field-Effect Transistor, 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Power Field-Effect Transistor, 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
600V 60A N-Ch MOSFET, 45mR, TO-247
Power Field-Effect Transistor, 39A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 31A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Power Field-Effect Transistor,
Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
600V N-Ch MOSFET, 180mΩ, 25A, TO-247
FIBOX IPW 2819-G INSTRUMENT PROTECTION WINDOW, 11INX7.5IN
Unspecified
INSTRUMENT PROTECTION WINDOW, 11INX7.5IN; For Use With:Front Panel Mounted Meters; Highest NEMA Rating:4X; External Height - Imperial:11; External Width - Imperial:7.5; External Depth:2.8; External Depth - Imperial:2.8
Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
