Search Results for "IRF2804STRR7PP"

Power Field-Effect Transistor, 75A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN

Mosfet, Power; N-ch; Vdss 75V; Rds(on) 3.5MILLIOHMS; Id 170A; TO-220AB; Pd 300W; -55DE

Power Field-Effect Transistor, 75A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN

22A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN

Power Field-Effect Transistor, 75A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Power Field-Effect Transistor,

Power Field-Effect Transistor,

N-Ch MOSFET, 200V, 182A, 0.0066 Ohm, TO-247AC

Power Field-Effect Transistor, 75A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Power Field-Effect Transistor, 100A I(D), 200V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,

Power Field-Effect Transistor, 96A I(D), 250V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,

Power Field-Effect Transistor,

N-Channel MOSFET, 40V, 170A, 0.0036ohm, D2PAK, Surface Mount

RF Choke Wirewound 68uH 10% 2.52MHz 50Q-Factor Ferrite 185mA 2.9Ohm DCR AXL T/R

RF Choke Wirewound 4.7uH 10% 7.96MHz 40Q-Factor Ferrite 530mA 350mOhm DCR AXL T/R

RF Choke Wirewound 39uH 10% 2.52MHz 40Q-Factor Ferrite 240mA 1.7Ohm DCR AXL T/R

RF Choke Wirewound 270uH 10% 796KHz 60Q-Factor Ferrite 120mA 7.5Ohm DCR AXL T/R

RF Choke Wirewound 680uH 10% 796KHz 60Q-Factor Ferrite 75mA 20Ohm DCR AXL T/R

RF Choke Wirewound 33uH 10% 2.52MHz 40Q-Factor Ferrite 255mA 1.5Ohm DCR AXL T/R