RF Choke Wirewound 47uH 10% 2.52MHz 45Q-Factor Ferrite 340mA 1.22Ohm DCR AXL T/R
RF Choke Wirewound 8.2uH 10% 7.96MHz 70Q-Factor Ferrite 530mA 520mOhm DCR AXL T/R
Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, D2PAK-3
Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
RF Choke Wirewound 10uH 10% 2.52MHz 70Q-Factor Ferrite 500mA 580mOhm DCR AXL T/R
Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN
