Search Results for &quot; IRF7455PBF &quot;

Trans MOSFET N-CH 30V 15A 8-Pin SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 15A

Current Rating: 15A

Drain to Source Voltage (Vdss): 30V

+22

IRF7455

Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

IRF7455TRPBF

Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 3.6A

Current Rating: 3.6A

Drain to Source Breakdown Voltage: 150V

+12

Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

IRF7458

N-channel MOSFET,IRF7458 14A 30V

End of Life

Continuous Drain Current (ID): 19A

Drain to Source Voltage (Vdss): 25V

Fall Time: 5ns

Gate to Source Voltage (Vgs): 30V

+14

100V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 4.5A

Current Rating: 4.5A

Drain to Source Breakdown Voltage: 100V

+11

IRF7459

Power Field-Effect Transistor, 12A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 12A

Drain to Source Voltage (Vdss): 20V

Input Capacitance: 2.48nF

IRF7456

Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 16A

Gate to Source Voltage (Vgs): 12V

Max Operating Temperature: 150°C

IRF7457

Power Field-Effect Transistor, 15A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Obsolete

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

IRF7450

Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

IRF7451PBF

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

LEAD FREE, SO-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 3.6A

Current Rating: 3.6A

Drain to Source Breakdown Voltage: 150V

+16

IRF7456PBF

INTERNATIONAL RECTIFIER IRF7456PBF MOSFET Transistor, N Channel, 16 A, 20 V, 6.5 mohm, 10 V, 2 V

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 16A

Current Rating: 16A

Drain to Source Breakdown Voltage: 20V

+27

MOSFET, N, SO-8

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 4.5A

Current Rating: 4.5A

Drain to Source Breakdown Voltage: 100V

+26

IRF7458PBF

MOSFET, N, SO-8

Not Recommended for New Design

Package/Case: SOIC

Continuous Drain Current (ID): 14A

Current Rating: 14A

Drain to Source Voltage (Vdss): 30V

+23

Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Min Operating Temperature: -55

Terminal Position: DUAL

IRF7458TR

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Unknown

Package/Case: SOIC

Continuous Drain Current (ID): 14A

Current Rating: 14A

Drain to Source Voltage (Vdss): 30V

IRF7451HR

Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 3.6A

Drain to Source Voltage (Vdss): 150V

Fall Time: 15ns

IRF7457TR

Power Field-Effect Transistor, 15A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

Search Results for "IRF7455PBF"

Filters

IRF7455PBF

Trans MOSFET N-CH 30V 15A 8-Pin SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 15A

Current Rating: 15A

Drain to Source Voltage (Vdss): 30V

+22

IRF7455

Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

IRF7455TRPBF

Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 3.6A

Current Rating: 3.6A

Drain to Source Breakdown Voltage: 150V

+12

Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

IRF7458

N-channel MOSFET,IRF7458 14A 30V

End of Life

Continuous Drain Current (ID): 19A

Drain to Source Voltage (Vdss): 25V

Fall Time: 5ns

Gate to Source Voltage (Vgs): 30V

+14

100V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 4.5A

Current Rating: 4.5A

Drain to Source Breakdown Voltage: 100V

+11

IRF7459

Power Field-Effect Transistor, 12A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 12A

Drain to Source Voltage (Vdss): 20V

Input Capacitance: 2.48nF

IRF7456

Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 16A

Gate to Source Voltage (Vgs): 12V

Max Operating Temperature: 150°C

IRF7457

Power Field-Effect Transistor, 15A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Obsolete

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

IRF7450

Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

IRF7451PBF

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

LEAD FREE, SO-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 3.6A

Current Rating: 3.6A

Drain to Source Breakdown Voltage: 150V

+16

IRF7456PBF

INTERNATIONAL RECTIFIER IRF7456PBF MOSFET Transistor, N Channel, 16 A, 20 V, 6.5 mohm, 10 V, 2 V

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 16A

Current Rating: 16A

Drain to Source Breakdown Voltage: 20V

+27

MOSFET, N, SO-8

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 4.5A

Current Rating: 4.5A

Drain to Source Breakdown Voltage: 100V

+26

IRF7458PBF

MOSFET, N, SO-8

Not Recommended for New Design

Package/Case: SOIC

Continuous Drain Current (ID): 14A

Current Rating: 14A

Drain to Source Voltage (Vdss): 30V

+23

Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Min Operating Temperature: -55

Terminal Position: DUAL

IRF7458TR

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Unknown

Package/Case: SOIC

Continuous Drain Current (ID): 14A

Current Rating: 14A

Drain to Source Voltage (Vdss): 30V

IRF7451HR

Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 3.6A

Drain to Source Voltage (Vdss): 150V

Fall Time: 15ns

IRF7457TR

Power Field-Effect Transistor, 15A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8