Search Results for &quot; IRF7807D1PBF &quot;

Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC

End of Life

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 8.3A

Drain to Source Breakdown Voltage: 30V

+28

IRF7807D1TR

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Drain to Source Voltage (Vdss): 30V

Max Power Dissipation: 2.5W

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Obsolete

Max Operating Temperature: 150

8.3A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Active

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 8.3A

Drain to Source Breakdown Voltage: 30V

IRF7807D2PBF

Infineon IRF7807D2PBF N-channel MOSFET Transistor, 8.3 A, 30 V, 8-Pin SOIC

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 25mR

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Continuous Drain Current (ID): -5.2A

RoHS Compliant: No

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

LEAD FREE, SO-8

Obsolete

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

IRF7807V

Small Signal Field-Effect Transistor, 8.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 8.3A

Drain to Source Breakdown Voltage: 30V

Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 770pF

Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

SOP-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

IRF7807A

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

LEAD FREE, SO-8

Obsolete

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

IRF7807D2TRPBF

N-CH MOSFET 30V 8.3A 25mR SOIC

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 8.3A

Drain to Source Breakdown Voltage: 30V

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SO-8

Obsolete

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

IRF7807VTR

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 8.3A

Drain to Source Voltage (Vdss): 30V

IRF7807VD1

Small Signal Field-Effect Transistor, 8.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 8.3A

Drain to Source Voltage (Vdss): 30V

IRF7807AHR

Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC

End of Life

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Gate to Source Voltage (Vgs): 12V

Max Operating Temperature: 150°C

IRF7807VD2

Small Signal Field-Effect Transistor, 8.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Drain to Source Voltage (Vdss): 30V

Max Power Dissipation: 2.5W

IRF7807PBF

N-Channel MOSFET, 30V, 8.3A, 0.025ohm, SOIC

LEAD FREE, SO-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 13A

Drain to Source Breakdown Voltage: 30V

IRF7807ZPBF

Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Search Results for "IRF7807D1PBF"

Filters

IRF7807D1PBF

Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC

End of Life

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 8.3A

Drain to Source Breakdown Voltage: 30V

+28

IRF7807D1TR

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Drain to Source Voltage (Vdss): 30V

Max Power Dissipation: 2.5W

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Obsolete

Max Operating Temperature: 150

8.3A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Active

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 8.3A

Drain to Source Breakdown Voltage: 30V

IRF7807D2PBF

Infineon IRF7807D2PBF N-channel MOSFET Transistor, 8.3 A, 30 V, 8-Pin SOIC

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 25mR

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Continuous Drain Current (ID): -5.2A

RoHS Compliant: No

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

LEAD FREE, SO-8

Obsolete

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

IRF7807V

Small Signal Field-Effect Transistor, 8.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 8.3A

Drain to Source Breakdown Voltage: 30V

Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 770pF

Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

SOP-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

IRF7807A

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

LEAD FREE, SO-8

Obsolete

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

IRF7807D2TRPBF

N-CH MOSFET 30V 8.3A 25mR SOIC

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 8.3A

Drain to Source Breakdown Voltage: 30V

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SO-8

Obsolete

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

IRF7807VTR

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 8.3A

Drain to Source Voltage (Vdss): 30V

IRF7807VD1

Small Signal Field-Effect Transistor, 8.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 8.3A

Drain to Source Voltage (Vdss): 30V

IRF7807AHR

Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC

End of Life

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Gate to Source Voltage (Vgs): 12V

Max Operating Temperature: 150°C

IRF7807VD2

Small Signal Field-Effect Transistor, 8.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Drain to Source Voltage (Vdss): 30V

Max Power Dissipation: 2.5W

IRF7807PBF

N-Channel MOSFET, 30V, 8.3A, 0.025ohm, SOIC

LEAD FREE, SO-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 8.3A

Current Rating: 13A

Drain to Source Breakdown Voltage: 30V

IRF7807ZPBF

Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8