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IRLML6302GTRPBF

Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

LEAD FREE, MICRO-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

JEDEC Package Code: TO-236AB

IRLML6401GTRPBF

International Rectifier

Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,

,

Transferred

Package/Case: SOT-23

Continuous Drain Current (ID): -4.3A

Drain to Source Breakdown Voltage: -12V

Drain to Source Resistance: 50mR

IRLML6402GTRPBF

Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

LEAD FREE, MICRO-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

JEDEC Package Code: TO-236AB

IRLML5203GTRPBF

Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

SMALL OUTLINE, R-PDSO-G3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

JEDEC Package Code: TO-236AB

International Rectifier

Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

SMALL OUTLINE, R-PDSO-G6

Obsolete

Continuous Drain Current (ID): 5.6A

Drain to Source Voltage (Vdss): 20V

RoHS Compliant: No

International Rectifier

Mosfet, Power; N-ch; Vdss 20V; Rds(on) 0.03 Ohm; Id 6.5A; MICRO6; Pd 2W; Vgs +/-12V; -55D

Volume Production

Continuous Drain Current (ID): 6.5A

Current Rating: 6.5A

Drain to Source Voltage (Vdss): 20V

Lead Free: Contains Lead

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

MICRO-6

Active

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

International Rectifier

INTERNATIONAL RECTIFIER IRLMS1503 MOSFET, N LOGIC MICRO-6

Not Recommended for New Design

Continuous Drain Current (ID): 3.2A

Drain to Source Voltage (Vdss): 30V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

N-CH MOSFET 100V 1.5A SOT-223 440mR RdsOn

Obsolete

Package/Case: SOT-223

Continuous Drain Current (ID): 1.5A

Current Rating: 1.5A

Drain to Source Breakdown Voltage: 100V

100V N-Channel Logic Level A-FET, MOLDED PACKAGE, SOT-223, 4 LEAD, 4000/TAPE REEL

Obsolete

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: DUAL

Pin Count: 4

MOSFET N-CH 200V 770MA SOT-223

Obsolete

Package/Case: SOT-223-4

Continuous Drain Current (ID): 770mA

Current Rating: 770mA

Drain to Source Breakdown Voltage: 200V

Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: DUAL

Pin Count: 4

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

MICRO-6

Active

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Active

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

International Rectifier

N CHANNEL MOSFET, 30V, 3.2A, MICRO6; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; No. of Pins:6 ;RoHS Compliant: No

Obsolete

Package/Case: LSOP

Continuous Drain Current (ID): 3.2A

Current Rating: 3.2A

Drain to Source Voltage (Vdss): 30V

International Rectifier

Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

MICRO-6

Obsolete

Package/Case: LSOP

Continuous Drain Current (ID): 5.6A

Current Rating: -5.6A

Drain to Source Resistance: 50mR

International Rectifier

P CHANNEL MOSFET, -30V, 2.3A MICRO6

Unknown

Package/Case: LSOP

Continuous Drain Current (ID): 2.3A

Current Rating: -2.3A

Drain to Source Voltage (Vdss): 30V

Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

MICRO-6

Active

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

International Rectifier

Power Field-Effect Transistor, 2.3A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

SMALL OUTLINE, R-PDSO-G6

Obsolete

Package/Case: LSOP

Continuous Drain Current (ID): 2.4A

Current Rating: -2.3A

Drain to Source Voltage (Vdss): 20V

International Rectifier

Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

SMALL OUTLINE, R-PDSO-G6

Transferred

Package/Case: LSOP

Continuous Drain Current (ID): 3.2A

Drain to Source Voltage (Vdss): 20V

Input Capacitance: 300pF

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